AbstractThis paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated. Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.
Received: 28 March 2006
Revised: 21 July 2006
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation
of China (Grant
No~90307006), by the National High Tech.
Development Program of China (Grant
No~2003AA1Z1370), and by the State Key Development Program for Basic
Research of China (Grant No~G200
Cite this article:
Han De-Dong(韩德栋), Kang Jin-Feng(康晋锋), Liu Xiao-Yan(刘晓彦), Sun Lei(孙雷), Luo Hao(罗浩), and Han Ru-Qi(韩汝琦) Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium 2007 Chinese Physics 16 245
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