ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES
Zhang Ze (张泽)a, S.T.Lee (李述汤)b
a Beijing Laboratory of Electron Microscopy, Center of Condensed Mater Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Center of Super-Diamond and Advanced Films & Department of Physics and Material Sciences, City University of Hong Kong, Hong Kong, China
Abstract Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiOx particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs.
Received: 01 January 2001
Revised: 07 March 2001
Accepted manuscript online:
A new direct band gap silicon allotrope o-Si32 Xin-Chao Yang(杨鑫超), Qun Wei(魏群), Mei-Guang Zhang(张美光), Ming-Wei Hu(胡明玮), Lin-Qian Li(李林茜), and Xuan-Min Zhu(朱轩民). Chin. Phys. B, 2022, 31(2): 026104.
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