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Chinese Physics, 2001, Vol. 10(13): 111-116    DOI:
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES

Zhang Ze (张泽)a, S.T.Lee (李述汤)b
a Beijing Laboratory of Electron Microscopy, Center of Condensed Mater Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Center of Super-Diamond and Advanced Films & Department of Physics and Material Sciences, City University of Hong Kong, Hong Kong, China
Abstract  Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiOx particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs.
Keywords:  Silicon      nano-wires      growth mechanism      microstructures  
Received:  01 January 2001      Revised:  07 March 2001      Accepted manuscript online: 
PACS:  6146  
  6480G  

Cite this article: 

Zhang Ze (张泽), S.T.Lee (李述汤) ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES 2001 Chinese Physics 10 111

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