Abstract Low-temperature photoluminescence studies have been performed on Si-doped and Bedoped self-organized InAs/GaAs quantum dot(QD) samples to investigate the effect of doping. When Si or Be is doped into the sample,a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more smalll uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.
Received: 08 April 1999
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China(Grant No.69776016 and 19823001) and the State Key Program for Basic Research.
Cite this article:
WANG HAI-LONG (王海龙), ZHU HAI-JUN (朱海军), FENG SONG-LIN (封松林), NING DONG (宁东), WANG HUI (汪辉), WANG XIAO-DONG (王晓东), JIANG DE-SHENG (江德生) EFFECT OF DOPANT ON THE UNIFORMITY OF InAs SELF-ORGANIZED QUANTUM DOTS 1999 Acta Physica Sinica (Overseas Edition) 8 624
Qubits based on semiconductor quantum dots Xin Zhang(张鑫), Hai-Ou Li(李海欧), Ke Wang(王柯), Gang Cao(曹刚), Ming Xiao(肖明), Guo-Ping Guo(郭国平). Chin. Phys. B, 2018, 27(2): 020305.
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