Please wait a minute...
Chin. Phys. B, 2026, Vol. 35(4): 048502    DOI: 10.1088/1674-1056/ae0019
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Cryogenic low-noise amplifiers of low power dissipation for space terahertz astronomy

Jie Liu(刘洁), Dong Liu(刘冬), Kun Zhang(张坤), Ming Yao(姚明), Jun-Da Jin(金骏达), Qi-Jun Yao(姚骑均), Jing Li(李婧), and Sheng-Cai Shi(史生才)†
Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210023, China
Abstract  ryogenic low-noise amplifiers (CLNAs) are of particular interest for applications such as radio astronomy and quantum information science. Here we report on the design and characterization of low-power-dissipation wideband CLNAs for a terahertz spectrometer onboard China's Space Station Telescope (CSST). A simple small-signal and noise model is established based on the DC and RF characteristics of SiGe heterojunction-bipolar-transistors (HBTs) adopted for this development. The developed SiGe HBT CLNAs at 4 K demonstrate an average noise temperature of 4.5 K and a gain of exceeding 35 dB in the frequency range of 0.1 GHz-1.1 GHz. With the power dissipation as low as 3 mW, the average noise temperature is still as low as 6.8 K. The combination of low power dissipation and low noise temperature is rather beneficial to applications in space instruments and complex systems.
Keywords:  SiGe heterojunction-bipolar-transistor (HBT)      low noise amplifier      low power  
Received:  02 July 2025      Revised:  13 August 2025      Accepted manuscript online:  28 August 2025
PACS:  85.30.Pq (Bipolar transistors)  
  84.30.Le (Amplifiers)  
  95.55.Jz (Radio telescopes and instrumentation; heterodyne receivers)  
Fund: Project supported in part by the National Key Research and Development Program of China (Grant Nos. 2023YFA1608201 and 2023YFF0722301), the Projects of International Cooperation and Exchanges, the National Natural Science Foundation of China (Grant No. 12020101002), and the Program of the Chinese Academy of Sciences (Grant No. PTYQ2024BJ0010).
Corresponding Authors:  Sheng-Cai Shi     E-mail:  scshi@pmo.ac.cn

Cite this article: 

Jie Liu(刘洁), Dong Liu(刘冬), Kun Zhang(张坤), Ming Yao(姚明), Jun-Da Jin(金骏达), Qi-Jun Yao(姚骑均), Jing Li(李婧), and Sheng-Cai Shi(史生才) Cryogenic low-noise amplifiers of low power dissipation for space terahertz astronomy 2026 Chin. Phys. B 35 048502

[1] Li J, Deng X J, Li Y M, Hu J, Miao W, Lin C X, Jiang J and Shi S C 2025 Research 8 0586
[2] Zhang K, Yao M, Liu D, Liu B L, Li J, Yao Q J and Shi S C 2023 J. Infrared Millim. Waves 42 188
[3] Li J, Masanori Takeda, Wang Z, Shi S C and Yang J 2008 Appl. Phys. Lett. 92 222504
[4] Quan J, Liu Y J, Liu D, Zhang K, Liang J T, Li J, Yao Q J and Shi S C 2014 Chin. Sci. Bull. 59 3490
[5] Schleeh J, Rodilla H,Wadefalk N, Nilsson P Å and Grahn J 2014 Solid- State Electronics 91 74
[6] Montazeri S, Grimes P K, Edward Tong C Y and Bardin J C 2016 IEEE Trans. THz Sci. Technol. 6 133
[7] Russell D and Weinreb S 2012 IEEE Trans. THz Sci. Technol. 60 1641
[8] Weinreb S, Bardin J, Mani H and Jones G 2009 Rev. Sci. Instrum. 80 044702
[9] Bardin J C 2021 IEEE Solid-State Circuits Magazine 13 22
[10] Weinreb S, Bardin J C and Mani H 2021 IEEE Trans. Microwave Theory Tech. 55 2306
[11] Bardin J C and Weinreb S 2008 IEEE MTT-S International Microwave Symposium Digest, June 15-20, 2008 Atlanta, GA, USA, p. 459
[12] Niu G, Cressler J D, Zhang S, Ansley W E, Webster C S and Harame D L 2001 IEEE Trans. Electron Dev. 48 2568
[13] Yau K H K, Chevalier P, Chantre A and Voinigescu S P 2011 IEEE Trans. Microwave Theory Tech. 59 1983
[14] Bardin J C 2009 Silicon-Germanium Heterojunction Bipolar Transistors for Extremely Low-Noise Applications, Ph. D. Dissertation (Pasadena: California Institute of Technology)
[15] Fernandez J E 1998 TMO Progress Report 15 42
[16] Sheldon A, Belostotski L, Mani H, Groppi C E and Warnick K F 2021 IEEE Microwave Magazine 22 52
[17] Bardin J C and Weinreb S 2009 IEEE Microwave and Wireless Components Letters 19 2020041
[18] Chang SWand Bardin J C 2017 IEEE MTT-S International Microwave Symposium, June 04-09, 2017 Honolulu, HI, USA, p. 157
[19] Hosseini, Mohsen, Wong W T and Bardin J C IEEE MTT-S International Microwave Symposium, June 02-07, 2019 Boston, MA, USA, p. 164
[1] Biodegradable and flexible l-carrageenan based RRAM with ultralow power consumption
Jing-Yao Bian(卞景垚), Ye Tao(陶冶), Zhong-Qiang Wang(王中强), Xiao-Ning Zhao(赵晓宁), Ya Lin(林亚), Hai-Yang Xu(徐海阳), and Yi-Chun Liu(刘益春). Chin. Phys. B, 2024, 33(2): 027301.
[2] C band microwave damage characteristics of pseudomorphic high electron mobility transistor
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇). Chin. Phys. B, 2021, 30(9): 098502.
[3] Low power consumption 4-channel variable optical attenuator array based on planar lightwave circuit technique
Mei-Zhen Ren(任梅珍), Jia-Shun Zhang(张家顺), Jun-Ming An(安俊明), Yue Wang(王玥), Liang-Liang Wang(王亮亮), Jian-Guang Li(李建光), Yuan-Da Wu(吴远大), XiaoJie Yin(尹小杰), Xiong-Wei Hu(胡雄伟). Chin. Phys. B, 2017, 26(7): 074221.
[4] Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Yang Liu(刘阳), Chang-Chun Chai(柴常春), Yin-Tang Yang(杨银堂), Jing Sun(孙静), Zhi-Peng Li(李志鹏). Chin. Phys. B, 2016, 25(4): 048504.
[5] MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs
Cheng Zhi-Qun(程知群), Cai Yong(蔡勇), Liu Jie(刘杰), Zhou Yu-Gang(周玉刚), Lau Kei May, and Chen J. Kevin. Chin. Phys. B, 2007, 16(11): 3494-3497.
No Suggested Reading articles found!