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Localization effect in single crystal of RuAs2 |
| Zhe-Kai Yi(易哲铠)1, Qi Liu(刘琪)1, Shuang-Kui Guang(光双魁)2, Sheng Xu(徐升)3, Xiao-Yu Yue(岳小宇)4, Hui Liang(梁慧)1, Na Li(李娜)1, Ying Zhou(周颖)1, Dan-Dan Wu(吴丹丹)1, Yan Sun(孙燕)1, Qiu-Ju Li(李秋菊)5, Peng Cheng(程鹏)3, Tian-Long Xia(夏天龙)3,†, Xue-Feng Sun(孙学峰)1,6,‡, and Yi-Yan Wang(王义炎)1,§ |
1 Anhui Key Laboratory of Magnetic Functional Materials and Devices, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China;
2 Department of Physics and Key Laboratory of Strongly-Coupled Quantum Matter Physics(CAS), University of Science and Technology of China, Hefei 230026, China;
3 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China;
4 School of Optical and Electronic Information, Suzhou City University, Suzhou 215104, China;
5 School of Physics and Optoelectronic Engineering, Anhui University, Hefei 230601, China;
6 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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Abstract We report the magnetotransport and thermal properties of RuAs2 single crystal. RuAs2 exhibits semiconductor behavior and localization effect. The crossover from normal state to diffusive transport in the weak localization (WL) state and then to variable range hopping (VRH) transport in the strong localization state has been observed. The transitions can be reflected in the measurement of resistivity and Seebeck coefficient. Negative magnetoresistance (NMR) emerges with the appearance of localization effect and is gradually suppressed in high magnetic field. The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH. The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect. Our findings show that RuAs2 is a suitable platform to study the localized state.
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Received: 06 January 2024
Revised: 19 January 2024
Accepted manuscript online: 30 January 2024
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PACS:
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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71.20.Nr
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(Semiconductor compounds)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2023YFA1406500 and 2019YFA0308602), the National Natural Science Foundation of China (Grant Nos. 12104011, 12274388, 12074425, 52102333, 12104010, 12204004, and 11874422), and the Natural Science Foundation of Anhui Province (Grant Nos. 2108085QA22 and 2108085MA16). |
Corresponding Authors:
Tian-Long Xia, Xue-Feng Sun, Yi-Yan Wang
E-mail: tlxia@ruc.edu.cn;xfsun@ahu.edu.cn;wyy@ahu.edu.cn
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Cite this article:
Zhe-Kai Yi(易哲铠), Qi Liu(刘琪), Shuang-Kui Guang(光双魁), Sheng Xu(徐升), Xiao-Yu Yue(岳小宇), Hui Liang(梁慧), Na Li(李娜), Ying Zhou(周颖), Dan-Dan Wu(吴丹丹), Yan Sun(孙燕), Qiu-Ju Li(李秋菊), Peng Cheng(程鹏), Tian-Long Xia(夏天龙), Xue-Feng Sun(孙学峰), and Yi-Yan Wang(王义炎) Localization effect in single crystal of RuAs2 2024 Chin. Phys. B 33 047501
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