Superjunction nanoscale partially narrow mesa IGBT towards superior performance

doi:10.1088/1674-1056/26/3/038502

Abstract We present a detailed study of a superjunction (SJ) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (V_ce(sat)) and low turn-off loss (E_off) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the V_ce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT. Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the E_off is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between V_ce(sat) and E_off is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.

Keywords: insulated gate bipolar transistor (IGBT) partially narrow mesa (PNM) superjunction (SJ) turn-off loss

Received: 09 November 2016
Revised: 19 December 2016
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Pq	(Bipolar transistors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

Corresponding Authors: Jiang Lu
E-mail: lujiang@ime.ac.cn

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Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生) Superjunction nanoscale partially narrow mesa IGBT towards superior performance 2017 Chin. Phys. B 26 038502

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