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Chin. Phys. B, 2017, Vol. 26(2): 028102    DOI: 10.1088/1674-1056/26/2/028102

Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

I Orak1,2, A Kocyigit3, Ş Alındal4
1 Bingöl University, Vocational School of Health Services, 12000 Bingöl, Turkey;
2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey;
3 Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, 76000 Igdir, Turkey;
4 Gazi Universty, Faculty of Sciences, Department of Physics, 06500, Ankara, Turkey
Abstract  Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO layer, and some main electrical parameters are investigated, such as surface/interface state (Nss), barrier height (Φb), series resistance (Rs), donor concentration (Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 kHz to 1 MHz and the direct current (DC) bias voltages in a range from -2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters, such as dielectric constant (ε"), dielectric loss (ε"), loss tangent (tan δ), the real and imaginary parts of electric modulus (M' and M"), and alternating current (AC) electrical conductivity (σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.
Keywords:  Au/ZnO/n-Si device      dielectric properties      polarization process      frequency and voltage dependence  
Received:  20 September 2016      Revised:  13 October 2016      Accepted manuscript online: 
PACS:  81.05.Dz (II-VI semiconductors)  
  85.30.-z (Semiconductor devices)  
  85.30.Hi (Surface barrier, boundary, and point contact devices)  
  85.30.Kk (Junction diodes)  
Corresponding Authors:  A Kocyigit     E-mail:

Cite this article: 

I Orak, A Kocyigit, Ş Alındal Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage 2017 Chin. Phys. B 26 028102

[1] Kabra V, Aamir L and Malik M M 2014 Beilstein J. Nanotechnol. 5 2216
[2] Jin W, Zhang K, Gao Z, Li Y, Yao L, Wang Y and Dai L 2015 ACS Appl. Mater. Interfaces 7 13131
[3] Tatar B, Bulgurcuoğlu A E, Gökdemir P, Aydoğan P, Yilmazer D, Özdemir O and Kutlu K 2009 Int. J. Hydrogen Energy 34 5208
[4] Sharma G D, Sharma S K and Roy M S 2004 Thin Solid Films 468 208
[5] Ren N, Sheng K, Zhang J M and Peng F Z 2013 IEEE Energy Conversion Congress and Exposition (IEEE) p. 2871
[6] Chen L, Deng J, Gao H, Yang Q, Wang G, Kong L, Cui M and Zhang Z 2016 J. Mater. Sci. Mater. Electron. 27 4275
[7] Yadav A B, Pandey A, Somvanshi D and Jit S 2015 IEEE Trans. Electron Devices 62 1879
[8] Orak İ, Ejderha K and Turut A 2015 Curr. Appl. Phys. 15 1054
[9] Gümüş A, Ersöz G, Yücedağ İ, Bayrakdar S and Altindal Ş 2015 J. Korean Phys. Soc. 67 889
[10] Kaya A, Alialy S, Demirezen S, Balbaşi M, Yerişkin S A and Aytimur A 2016 Ceram. Int. 42 3322
[11] Rajan L, Periasamy C and Sahula V 2016 IEEE Trans. Nanotechnol. 15 201
[12] Pradel K C, Jevasuwan W, Suwardy J, Bando Y, Fukata N and Wang Z L 2016 Chem. Phys. Lett. 658 158
[13] Marimuthu T, Anandhan N, Thangamuthu R, Mummoorthi M and Ravi G 2016 J. Alloys Compd. 677 211
[14] Su Y Q, Zhu Y, Yong D, Chen M, Su L, Chen A, Wu Y, Pan B and Tang Z 2016 J. Phys. Chem. Lett. 7 1484
[15] Li X B, Zhang X, Li L C, Huang L L, Zhang W, Ye J D and Hong J G 2016 Mater. Lett. 175 122
[16] Zhang Z L, Zheng G, Qu F Y and Wu X 2012 Chin. Phys. B 21 098104
[17] Ameen S, Park D-R, Shaheer Akhtar M and Shin H S 2016 Mater. Lett. 164 562
[18] Boujnah M, Boumdyan M, Naji S, Benyoussef A, El Kenz A and Loulidi M 2016 J. Alloys Compd. 671 560
[19] Liu C Y, Xu H Y, Sun Y, Ma J G and Liu Y C 2014 Opt. Express 22 16731
[20] He J, Cheng C and Hu J 2016 AIP Adv. 6 30701
[21] Singh S K, Hazra P, Tripathi S and Chakrabarti P 2016 Superlattices Microstruct. 91 62
[22] Park Y J, Song H, Ko K B, Ryu B D, Cuong T V and Hong C H 2016 J. Nanomater. 2016 1
[23] Şafak-Asar Y, Asar T, Altındal Ş and Özçelik S 2015 J. Alloys Compd. 628 442
[24] Demirezen S 2013 Appl. Phys. A 112 8273
[25] Tanrıkulu E E, Yıldız D E, Günen A and Altındal Ş 2015 Phys. Scr. 90 95801
[26] Cherif A, Jomni S, Mliki N and Beji L 2013 Physica B: Condens. Matter 429 79
[27] Yücedağ İ, Kaya A, Altındal Ş and Uslu I 2014 Chin. Phys. B 23 047304
[28] Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S and Bülbül M M 2013 Curr. Appl. Phys. 13 1225
[29] Nicollian E H and Brews J R 2003 MOS (metal oxide semiconductor) physics and technology (Wiley-Interscience)
[30] Sze S M 1981 Physics of Semiconductor Devices (Newyork: Wiley)
[31] Ataseven T, Tataroglu A, Memmedli T and Özçelik S 2012 J. Optoelectron. Adv. Mater. 14 640
[32] Yıldız D E and Dökme I 2011 J. Appl. Phys. 110 14507
[33] Yücedağ İ, Ersöz G, Gümüş A and Altındal Ş 2015 Int. J. Mod. Phys. B 29 1550075
[34] Kaya A, Altındal Ş, Asar Y Ş and Sönmez Z 2013 Chin. Phys. Lett. 30 017301
[35] Bülbül M M 2007 Microelectron. Eng. 84 124
[36] Altındal Yerişkin S, Balbaşi M and Tataroğlu A 2016 J. Appl. Polym. Sci. 133
[37] Baraz N, Yücedağ İ, Azizian-Kalandaragh Y and Altındal Ş 2016 J. Mater. Sci.: Mater. Electron. 1-7
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