Fabrication of superconducting NbN meander nanowires by nano-imprint lithography

doi:10.1088/1674-1056/25/1/017401

Abstract

Superconducting nanowire single photon detector (SNSPD), as a new type of superconducting single photon detector (SPD), has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano-imprint technology. In this process, a combination of hot embossing nano-imprint lithography (HE-NIL) and ultraviolet nano-imprint lithography (UV-NIL) is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature (T_c) of the superconducting NbN meander nanowires is about 5 K and the critical current (I_c) is about 3.5 μA at 2.5 K.

Keywords: nano-imprint lithography meander nanowires ultra-thin NbN films

Received: 09 September 2015
Revised: 14 October 2015
Accepted manuscript online:

PACS:	74.78.-w	(Superconducting films and low-dimensional structures)
	74.25.F-	(Transport properties)
	81.16.Rf	(Micro- and nanoscale pattern formation)
	81.07.Gf	(Nanowires)

Fund:

Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00106 and 2009CB929102) and the National Natural Science Foundation of China (Grant Nos. 11104333 and 10974243).

Corresponding Authors: Dong-Ning Zheng
E-mail: dzheng@iphy.ac.cn

Cite this article:

Mei Yang(杨美), Li-Hua Liu(刘丽华), Lu-Hui Ning(宁鲁慧), Yi-Rong Jin(金贻荣), Hui Deng(邓辉), Jie Li(李洁), Yang Li(李阳), Dong-Ning Zheng(郑东宁) Fabrication of superconducting NbN meander nanowires by nano-imprint lithography 2016 Chin. Phys. B 25 017401

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Fabrication of superconducting NbN meander nanowires by nano-imprint lithography

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