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Chin. Phys. B, 2015, Vol. 24(5): 058501    DOI: 10.1088/1674-1056/24/5/058501
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Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices

Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤)
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Abstract  

Asymmetric resistive switching processes were observed in W:AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlOx/WOy device structure is proposed to explain this switching time difference.

Keywords:  RRAM      tungsten oxide      asymmetric resistive switching  
Received:  01 November 2014      Revised:  02 December 2014      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
Corresponding Authors:  Wu Hua-Qiang     E-mail:  wuhq@tsinghua.edu.cn
About author:  85.30.De

Cite this article: 

Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤) Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices 2015 Chin. Phys. B 24 058501

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