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High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector |
| Li Chong (李冲), Xue Chun-Lai (薛春来), Li Chuan-Bo (李传波), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 μm was 0.32 A/W. The saturation output current was over 19.0 mA without bias.
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Received: 12 March 2013
Revised: 05 June 2013
Accepted manuscript online:
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PACS:
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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78.55.Cr
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(III-V semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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Corresponding Authors:
Xue Chun-Lai
E-mail: clxue@semi.ac.cn
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Cite this article:
Li Chong (李冲), Xue Chun-Lai (薛春来), Li Chuan-Bo (李传波), Liu Zhi (刘智), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明) High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector 2013 Chin. Phys. B 22 118503
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