The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device

doi:10.1088/1674-1056/21/4/047302

Abstract The I-V characteristics of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ junctions with different interfacial barriers are investigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interfacial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interfacial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.

Keywords: resistance switching interfacial Schottky barrier oxygen vacancy two-step switching

Received: 28 October 2011
Revised: 09 November 2011
Accepted manuscript online:

PACS:	73.40.-c	(Electronic transport in interface structures)
	73.50.-h	(Electronic transport phenomena in thin films)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2009CB930803), the National Natural Science Foundation of China (Grant No. 10834012), and the Innovation Foundation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).

Corresponding Authors: Zhao Hong-Wu,hwzhao@iphy.ac.cn
E-mail: hwzhao@iphy.ac.cn

Cite this article:

Liu Zi-Yu(刘紫玉), Zhang Pei-Jian(张培健), Meng Yang(孟洋), Li Dong(李栋), Meng Qing-Yu(孟庆宇), Li Jian-Qi(李建奇), and Zhao Hong-Wu(赵宏武) The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device 2012 Chin. Phys. B 21 047302

[1]	Waser R and Aono M 2007 Nature Materials 6 833
[2]	Sawa A 2008 Materials Today 11 28
[3]	Kyung Min Kim, Doo Seok Jeong and Cheol Seong Hwang 2011 Nanotechnology 22 254002
[4]	Liao Z L, Wang Z Z, Meng Y, Liu Z Y, Gao P, Gang J L, Zhao H W, Liang X J, Bai X D and Chen D M 2009 Appl. Phys. Lett. 94 253503
[5]	Li Y, Zhao G Y, Su J, Shen E F and Ren Y 2011 Appl. Phys. A 104 1069-1073
[6]	Oh S C, Jung H Y and Lee H 2011 J. Appl. Phys. 109 124511
[7]	Blom P W M, Wolf R M, Cillessen J F M and Krijin M P C M 1994 Phys. Rev. Lett. 73 2107
[8]	Sawa A, Fujii T, Kawasaki M and Tukura Y 2004 Appl. Phys. Lett. 85 4073
[9]	Jeong H Y, Lee J Y and Choi S Y 2010 Adv. Funct. Mater. 20 3912
[10]	Lee M D, Ho C H and Yao Y D 2011 IEEE Transactions on Magnetic 47 3
[11]	Muenstermann R, Menke T, Dittmann R and Waser R 2010 Adv. Mater. 22 4819
[12]	Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W and Chen D M 2010 Chin. Phys. B 19 037304
[13]	Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R and Williams R S 2008 Nanotechnol. 3 429
[14]	Chung Y L, Lai P Y, Chen Y C and Chen J S 2011 Appl. Mater. Interfaces 3 1918
[15]	Park W Y, Kim G H, Seok J Y, Kim K M, Song S J, Lee M H and Hwang C S 2010 Nanotechnology 21 195201
[16]	Knauth P and Tuller H L 1999 J. Appl. Phys. 85 897
[17]	Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn. (Oxford: Clarendon)
[18]	Yang J J, Miao F, Pickett M D, Ohlberg D A A, Stewart D R, Lau C N and William R S 2009 Nanotechnology 20 215201
[19]	Miao F, Yang J J and Borghetti J 2011 Nanotechnology 22 254007
[20]	Jeong D S, Schroeder H, Breuer U and Waser R 2008 J. Appl. Phys. 104 123716

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The influence of interfacial barrier engineering on the resistance switching of In2O3:SnO2/TiO2/In2O3:SnO2 device

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The influence of interfacial barrier engineering on the resistance switching of In₂O₃:SnO₂/TiO₂/In₂O₃:SnO₂ device