Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

doi:10.1088/1674-1056/20/7/077803

Abstract We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses. The ASE characteristics of Ag-backed MEH-PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.

Keywords: polymer semiconductor amplified spontaneous emission metal-backed film

Received: 05 January 2011
Revised: 16 February 2011
Accepted manuscript online:

PACS:	78.45.+h	(Stimulated emission)
	42.70.-a	(Optical materials)
	78.66.-w	(Optical properties of specific thin films)

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Zhang Bo (张波), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Lou Zhi-Dong (娄志东), Liu Xiao-Jun (刘小君), Hu Bing (胡兵), Wu Wen-Bin (武文彬) Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film 2011 Chin. Phys. B 20 077803

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Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

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