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Chin. Phys. B, 2010, Vol. 19(6): 067304    DOI: 10.1088/1674-1056/19/6/067304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

Zhang Jian(张健)a), He Jin(何进)a)b), and Zhang Li-Ning(张立宁)a)
a Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China; b The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
Abstract  A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials
Keywords:  surface potential      MOSFET modeling      oxide--silicon--oxide system  
Received:  01 June 2009      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60876027 and 60976066), and the National Science Fund for Distinguished Young Scholars of China (Grant No.~60925015).

Cite this article: 

Zhang Jian(张健), He Jin(何进), and Zhang Li-Ning(张立宁) One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system 2010 Chin. Phys. B 19 067304

[1] Taur Y 2001 IEEE Trans. Electron Devices 48 2861
[2] Liu H X and Luan S Z 2008 Chin. Phys. B 17 3077
[3] Hu S D, Li Z J and Zhang B 2009 Chin. Phys. B 18 315
[4] Sleight J W and Rios R 1998 IEEE Trans. Electron Devices 45 821
[5] Shi X and Wong W 2003 IEEE Trans. Electron Devices 50 1793
[6] Conte S D and Carl de Boor 1980 Elementary Numerical Analysis: an Algorithmic Approach (New York: McGraw-Hill)
[7] Liu F, He J, Zhang J, Chen Y and Chan M 2008 IEEE Trans. Electron Devices 55 3494
[8] Synopsys 2005 TCAD Sentaurus Device User's Manual (CA: Mountain View)
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