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One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system |
Zhang Jian(张健)a), He Jin(何进)a)b)†, and Zhang Li-Ning(张立宁)a) |
a Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China; b The Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
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Abstract A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials
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Received: 01 June 2009
Accepted manuscript online:
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PACS:
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos.~60876027 and
60976066), and the National Science Fund for Distinguished Young
Scholars of China (Grant No.~60925015). |
Cite this article:
Zhang Jian(张健), He Jin(何进), and Zhang Li-Ning(张立宁) One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system 2010 Chin. Phys. B 19 067304
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