Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

doi:10.1088/1674-1056/19/9/097802

Abstract With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process.

Keywords: intrinsic defects annealing time low temperature photoluminescence electron spin resonance

Received: 12 January 2010
Revised: 26 March 2010
Accepted manuscript online:

PACS:	7850
	6116N
	7855

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60876061), Pre-Research Foundation (Grant No. 9140A08050508), and the 13115 Innovation Engineering of Shanxi, China (Grant No. 2008ZDKG-30).

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Cheng Ping(程萍), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), and Guo Hui(郭辉) Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC 2010 Chin. Phys. B 19 097802

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Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC

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