Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

doi:10.1088/1674-1056/19/3/037304

Abstract We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400--800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO₂ layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.

Keywords: colossal electroresistance effect electrical pulse induced resistance switching (EPIR) transparent resistance random access memory (TRRAM)

Received: 09 July 2009
Revised: 17 August 2009
Accepted manuscript online:

PACS:	84.30.Sk	(Pulse and digital circuits)
	81.15.Cd	(Deposition by sputtering)
	68.60.Bs	(Mechanical and acoustical properties)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Basic Research Program of China (Grant No.~2007CB925002), the National High Technology Research and Development Program of China (Grant No.~2008AA031401), and Chinese Academy of Sciences.

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Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏) Enhanced resistance switching stability of transparent ITO/TiO₂/ITO sandwiches 2010 Chin. Phys. B 19 037304

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Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

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Enhanced resistance switching stability of transparent ITO/TiO₂/ITO sandwiches