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Chin. Phys. B, 2009, Vol. 18(7): 3002-3007    DOI: 10.1088/1674-1056/18/7/064
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide

Li Jian-Feng(李建丰)a)b), Chang Wen-Li(常文利)b), Ou Gu-Ping(欧谷平)a), and Zhang Fu-Jia(张福甲)a)
a Department of Physics, Lanzhou University, Lanzhou 730000, China; b School of Mathematics, Physics & Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China
Abstract  Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm2/(V$\cdot$s) and field-effect electron mobility of 0.031 cm2/(V$\cdot$s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.
Keywords:  organic heterojunction transistors      ambipolar      air-stable      high electron affinity  
Received:  02 October 2008      Revised:  24 December 2008      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  84.30.Sk (Pulse and digital circuits)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  72.20.Ee (Mobility edges; hopping transport)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 60676033 and 60276026), the Natural Science Foundation of Gansu Province, China (Grant No ZS031-A25-012-G), and `Qing Lan' Talent Engineering Funds from Lanzhou Jiaotong University, China (Grant No QL-08-18A).

Cite this article: 

Li Jian-Feng(李建丰), Chang Wen-Li(常文利), Ou Gu-Ping(欧谷平), and Zhang Fu-Jia(张福甲) Air-stable ambipolar organic field effect transistors with heterojunction of pentacene and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide 2009 Chin. Phys. B 18 3002

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