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Chinese Physics, 2006, Vol. 15(8): 1849-1854    DOI: 10.1088/1009-1963/15/8/037

Study on the delamination of tungsten thin films on Sb2Te3

Xu Jia-Qing(徐嘉庆)a)†, Liu Bo(刘波)a), Song Zhi-Tang(宋志棠)a), Feng Song-Lin(封松林)a), and Chen Bomyb)
a Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Changning Road, Shanghai 200050,China; b Silicon Storage Technology, Inc., 1171 Sonora Court,Sunnyvale, CA 94086, USA
Abstract  To investigate the reliability of electrode materials for chalcogenide random access memory (C-RAM) applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb$_{2}$Te$_{3}$ bilayer system surface are observed by field emission scanning electronic microscope (FESEM) and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.
Keywords:  C-RAM      delamination      adhesion  
Received:  25 August 2005      Revised:  29 April 2006      Accepted manuscript online: 
PACS:  68.60.Bs (Mechanical and acoustical properties)  
  68.35.Ct (Interface structure and roughness)  
  68.35.Np (Adhesion)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  84.30.Sk (Pulse and digital circuits)  
Fund: Project Supported by the National High Technology Development Program of China (Grant No 2004AA302G20), Science and Technology Council of Shanghai (Grant Nos 0452nm012, 04DZ05612, 04ZR14154, 04JC14080, 05JC14076, AM0414, 05nm05043, Chinese Academy of Sciences (Grant No Y2005027), and Silicon Storage Technology, Inc.

Cite this article: 

Xu Jia-Qing(徐嘉庆), Liu Bo(刘波), Song Zhi-Tang(宋志棠), Feng Song-Lin(封松林), and Chen Bomy Study on the delamination of tungsten thin films on Sb2Te3 2006 Chinese Physics 15 1849

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