Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones
Zhou Jing(周静)a), ü Tian-Quan(吕天全)a)†, Xie Wen-Guang(谢文广)b), and Cao Wen-Wu(曹文武)a)c)
a Center of Condensed Matter Science and Technology, Harbin Institute of Technology, Harbin 150001, China; b Department of Physical Science and Technology, Heilongjiang University, Harbin 150080, China; c Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
Abstract By taking into account structural transition zones near the lateral and thickness direction edges, this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation. The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.
Received: 10 January 2009
Revised: 30 March 2009
Accepted manuscript online:
Zhou Jing(周静), ü Tian-Quan(吕天全), Xie Wen-Guang(谢文广), and Cao Wen-Wu(曹文武) Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones 2009 Chin. Phys. B 18 3054
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