INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

doi:10.1088/1004-423X/3/9/005

Abstract

Abstract In this paper, the effect of temperature on the composition and structure of the Si₃N₄ thin film is investigated. X-ray diffraction pattern and transmission electron microscope (TEM) analyses show that the Si₃N₄ film undergoes the transition from amorphous to crystalline phase with increasing deposition temperature. Infra-red qualitative analysis shows that the content of hydrogen decreases with increasing deposition temperature.The stoichiometric of Si₃N₄ is investigated by X-ray photoelectron spectroscopy or electron spectroscopy for chemical analysis.

Received: 22 July 1993
Accepted manuscript online:

PACS:	68.55.Nq	(Composition and phase identification)
	68.55.A-	(Nucleation and growth)
	68.55.-a	(Thin film structure and morphology)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	64.70.K-
	61.50.Nw	(Crystal stoichiometry)

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CHEN JUN-FANG (陈俊芳), CHENG SHAO-YU (程绍玉), REN ZHAO-XING (任兆杏), ZHANG SU-QING (张束清), NING ZHAO-YUAN (宁兆元), WU XUE-MEI (吴雪梅) INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD 1994 Acta Physica Sinica (Overseas Edition) 3 682

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INVESTIGATION ON THE COMPOSITION AND STRUCTURE OF SILICON NITRIDE FILM PREPARED BY ECR-PECVD

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