中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68504-068504.doi: 10.1088/1674-1056/21/6/068504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

张金平, 李泽宏, 张波, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2011-11-15 修回日期:2012-03-02 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Science and Technology Major Project of China (Grant No. 2011ZX02504-003) and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024).

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

Zhang Jin-Ping(张金平)†, Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2011-11-15 Revised:2012-03-02 Online:2012-05-01 Published:2012-05-01
  • Contact: Zhang Jin-Ping E-mail:jinpingzhang@uestc.edu.cn
  • Supported by:
    Project supported by the National Science and Technology Major Project of China (Grant No. 2011ZX02504-003) and the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2011J024).

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摘要： A novel high-voltage light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) with buried p-layer (BP) is proposed in this paper. Since the negative charges in the BP layer modulate the bulk electric field distribution, the electric field peaks both at the junction of the p base/n-type carrier stored (N-CS) layer and the corners of the trench gates are reduced, and new electric field peaks appear at the junction of the BP layer/N- drift region. As a result, the overall electric field in the N- drift region is enhanced and the proposed structure improves the breakdown voltage (BV) significantly compared with the LPT CSTBT. Furthermore, the proposed structure breaks the limitation of the doping concentration of the N-CS layer (NN -CS) to the BV, and hence a higher NN-CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop (Vce(sat)) can be obtained with almost constant BV. The results show that with a BP layer doping concentration of NBP=7 × 1015 cm-3, a thickness of LBP=2.5 μm, and a width of WBP=5 μm, the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V, with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3. However, with the same N--drift region thickness of 150 μm and NN-CS, the BV of the CSTBT decreases from 1598 V to 247 V. Meanwhile, the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.

关键词: carrier stored trench bipolar transistor, light punch-through, buried p-layer, breakdown voltage

Abstract: A novel high-voltage light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) with buried p-layer (BP) is proposed in this paper. Since the negative charges in the BP layer modulate the bulk electric field distribution, the electric field peaks both at the junction of the p base/n-type carrier stored (N-CS) layer and the corners of the trench gates are reduced, and new electric field peaks appear at the junction of the BP layer/N- drift region. As a result, the overall electric field in the N- drift region is enhanced and the proposed structure improves the breakdown voltage (BV) significantly compared with the LPT CSTBT. Furthermore, the proposed structure breaks the limitation of the doping concentration of the N-CS layer (NN -CS) to the BV, and hence a higher NN-CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop (Vce(sat)) can be obtained with almost constant BV. The results show that with a BP layer doping concentration of NBP=7 × 1015 cm-3, a thickness of LBP=2.5 μm, and a width of WBP=5 μm, the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V, with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3. However, with the same N--drift region thickness of 150 μm and NN-CS, the BV of the CSTBT decreases from 1598 V to 247 V. Meanwhile, the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN-CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.

Key words: carrier stored trench bipolar transistor, light punch-through, buried p-layer, breakdown voltage

中图分类号:  (Semiconductor devices)

  • 85.30.-z
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)