Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

doi:10.1088/1674-1056/ab5fb9

中国物理B ›› 2020, Vol. 29 ›› Issue (2): 27301-027301.doi: 10.1088/1674-1056/ab5fb9

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China;
3 China Academy of Space Technology(Xi'an), Xi'an 710000, China;
4 Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China

收稿日期:2019-11-04 修回日期:2019-12-05 出版日期:2020-02-05 发布日期:2020-02-05
通讯作者: Sheng-Lei Zhao, Jin-Cheng Zhang E-mail:slzhao@xidian.edu.cn;jchzhang@xidian.edu.cn
基金资助:
Project supported by the National Key Science & Technology Special Project of China (Grant No. 2017ZX01001301), the National Key Research and Development Program of China (Grant No. 2016YFB0400100), and the National Natural Science Foundation of China (Grant Nos. 51777168 and 61801374).

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

Zhong-Xu Wang(王中旭)¹, Lin Du(杜林)², Jun-Wei Liu(刘俊伟)¹, Ying Wang(王颖)³, Yun Jiang(江芸)², Si-Wei Ji(季思蔚)², Shi-Wei Dong(董士伟)³, Wei-Wei Chen(陈伟伟)³, Xiao-Hong Tan(谭骁洪)⁴, Jin-Long Li(李金龙)⁴, Xiao-Jun Li(李小军)³, Sheng-Lei Zhao(赵胜雷)¹, Jin-Cheng Zhang(张进成)¹, Yue Hao(郝跃)¹

1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China;
3 China Academy of Space Technology(Xi'an), Xi'an 710000, China;
4 Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China

Received:2019-11-04 Revised:2019-12-05 Online:2020-02-05 Published:2020-02-05
Contact: Sheng-Lei Zhao, Jin-Cheng Zhang E-mail:slzhao@xidian.edu.cn;jchzhang@xidian.edu.cn
Supported by:
Project supported by the National Key Science & Technology Special Project of China (Grant No. 2017ZX01001301), the National Key Research and Development Program of China (Grant No. 2016YFB0400100), and the National Natural Science Foundation of China (Grant Nos. 51777168 and 61801374).

摘要/Abstract

摘要： A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors (HEMTs). For GaN channel HEMTs with gate-drain spacing L_GD=2.5 μm, the breakdown voltage V_BR increases from 518 V to 582 V by increasing gate metal height h from 0.2 μm to 0.4 μm. For GaN channel HEMTs with L_GD=7 μm, V_BR increases from 953 V to 1310 V by increasing h from 0.8 μm to 1.6 μm. The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension. For Al_0.4Ga_0.6N channel HEMT with L_GD=7 μm, V_BR increases from 1535 V to 1763 V by increasing h from 0.8 μm to 1.6 μm, resulting in a high average breakdown electric field of 2.51 MV/cm. Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs, and this method can be utilized in all the lateral semiconductor devices.

关键词: GaN channel HEMTs, AlGaN channel HEMTs, breakdown voltage, gate metal height

Abstract: A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channel high-electron-mobility-transistors (HEMTs). For GaN channel HEMTs with gate-drain spacing L_GD=2.5 μm, the breakdown voltage V_BR increases from 518 V to 582 V by increasing gate metal height h from 0.2 μm to 0.4 μm. For GaN channel HEMTs with L_GD=7 μm, V_BR increases from 953 V to 1310 V by increasing h from 0.8 μm to 1.6 μm. The breakdown voltage enhancement results from the increase of the gate sidewall capacitance and depletion region extension. For Al_0.4Ga_0.6N channel HEMT with L_GD=7 μm, V_BR increases from 1535 V to 1763 V by increasing h from 0.8 μm to 1.6 μm, resulting in a high average breakdown electric field of 2.51 MV/cm. Simulation and analysis indicate that the high gate metal height is an effective method to enhance breakdown voltage in GaN-based HEMTs, and this method can be utilized in all the lateral semiconductor devices.

Key words: GaN channel HEMTs, AlGaN channel HEMTs, breakdown voltage, gate metal height

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)

王中旭, 杜林, 刘俊伟, 王颖, 江芸, 季思蔚, 董士伟, 陈伟伟, 谭骁洪, 李金龙, 李小军, 赵胜雷, 张进成, 郝跃. Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height[J]. 中国物理B, 2020, 29(2): 27301-027301.

Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height[J]. Chin. Phys. B, 2020, 29(2): 27301-027301.

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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height

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