Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

doi:10.1088/1674-1056/ac2729

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/ac2729

Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

Pei-Pei Ma(马培培)^1,2, Jun Zheng(郑军)^1,2,†, Ya-Bao Zhang(张亚宝)^1,2, Xiang-Quan Liu(刘香全)^1,2, Zhi Liu(刘智)^1,2, Yu-Hua Zuo(左玉华)^1,2, Chun-Lai Xue(薛春来)^1,2, and Bu-Wen Cheng(成步文)^1,2

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2021-07-02 修回日期:2021-09-08 接受日期:2021-09-16 出版日期:2022-03-16 发布日期:2022-03-25
通讯作者: Jun Zheng E-mail:zhengjun@semi.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 62050073, 62090054, and 61975196), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC022).

Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2021-07-02 Revised:2021-09-08 Accepted:2021-09-16 Online:2022-03-16 Published:2022-03-25
Contact: Jun Zheng E-mail:zhengjun@semi.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 62050073, 62090054, and 61975196), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC022).

摘要/Abstract

摘要： Lateral β-Ga₂O₃ Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type β-Ga₂O₃ single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ ·cm². Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 ℃ to 150 ℃. These results suggest that the lateral β-Ga₂O₃ SBD has a tremendous potential for future power electronic applications.

关键词: β -Ga₂O₃, Schottky barrier diodes, rectifying ability, breakdown voltage

Abstract: Lateral β-Ga₂O₃ Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type β-Ga₂O₃ single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ ·cm². Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 ℃ to 150 ℃. These results suggest that the lateral β-Ga₂O₃ SBD has a tremendous potential for future power electronic applications.

Key words: β -Ga₂O₃, Schottky barrier diodes, rectifying ability, breakdown voltage

中图分类号: (Semiconductor-electrolyte contacts)

73.40.Mr

84.30.Jc (Power electronics; power supply circuits) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes)

Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302.

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Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

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