A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

doi:10.1088/1674-1056/ac4e08

中国物理B ›› 2022, Vol. 31 ›› Issue (7): 78501-078501.doi: 10.1088/1674-1056/ac4e08

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

Pei Shen(沈培)^1,2, Ying Wang(王颖)^1,†, and Fei Cao(曹菲)¹

1 The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The School of Mechanical and Electronic Engineering, Pingxiang University, Pingxiang 337055, China

收稿日期:2021-10-19 修回日期:2021-12-20 接受日期:2022-01-24 出版日期:2022-06-09 发布日期:2022-06-09
通讯作者: Ying Wang E-mail:wangying7711@yahoo.com
基金资助:
This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045), the National Natural Science Foundation of Jiangxi Province of China (Grant No. 20202BABL201021), and the Education Department of Jiangxi Province of China for Youth Foundation (Grant No. GJJ191154).

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

Pei Shen(沈培)^1,2, Ying Wang(王颖)^1,†, and Fei Cao(曹菲)¹

1 The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China;
2 The School of Mechanical and Electronic Engineering, Pingxiang University, Pingxiang 337055, China

Received:2021-10-19 Revised:2021-12-20 Accepted:2022-01-24 Online:2022-06-09 Published:2022-06-09
Contact: Ying Wang E-mail:wangying7711@yahoo.com
Supported by:
This work was supported in part by the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045), the National Natural Science Foundation of Jiangxi Province of China (Grant No. 20202BABL201021), and the Education Department of Jiangxi Province of China for Youth Foundation (Grant No. GJJ191154).

摘要/Abstract

摘要： An optimized silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) structure with side-wall p-type pillar (p-pillar) and wrap n-type pillar (n-pillar) in the n-drain was investigated by utilizing Silvaco TCAD simulations. The optimized structure mainly includes a p$+$ buried region, a light n-type current spreading layer (CSL), a p-type pillar region, and a wrapping n-type pillar region at the right and bottom of the p-pillar. The improved structure is named as SNPPT-MOS. The side-wall p-pillar region could better relieve the high electric field around the p$+$ shielding region and the gate oxide in the off-state mode. The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance ($R_{\rm on,sp}$). As a result, the SNPPT-MOS structure exhibits that the figure of merit (FoM) related to the breakdown voltage ($V_{\rm BR}$) and $R_{\rm on,sp}$ ($V_{\rm BR}^{2}R_{\rm on,sp}$) of the SNPPT-MOS is improved by 44.5%, in comparison to that of the conventional trench gate SJ MOSFET (full-SJ-MOS). In addition, the SNPPT-MOS structure achieves a much faster-witching speed than the full-SJ-MOS, and the result indicates an appreciable reduction in the switching energy loss.

关键词: 4H-silicon carbide (4H-SiC) trench gate MOSFET, breakdown voltage (V_BR), specific on-resistance (R_on,sp), switching energy loss, super-junction

Abstract: An optimized silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFET) structure with side-wall p-type pillar (p-pillar) and wrap n-type pillar (n-pillar) in the n-drain was investigated by utilizing Silvaco TCAD simulations. The optimized structure mainly includes a p$+$ buried region, a light n-type current spreading layer (CSL), a p-type pillar region, and a wrapping n-type pillar region at the right and bottom of the p-pillar. The improved structure is named as SNPPT-MOS. The side-wall p-pillar region could better relieve the high electric field around the p$+$ shielding region and the gate oxide in the off-state mode. The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance ($R_{\rm on,sp}$). As a result, the SNPPT-MOS structure exhibits that the figure of merit (FoM) related to the breakdown voltage ($V_{\rm BR}$) and $R_{\rm on,sp}$ ($V_{\rm BR}^{2}R_{\rm on,sp}$) of the SNPPT-MOS is improved by 44.5%, in comparison to that of the conventional trench gate SJ MOSFET (full-SJ-MOS). In addition, the SNPPT-MOS structure achieves a much faster-witching speed than the full-SJ-MOS, and the result indicates an appreciable reduction in the switching energy loss.

Key words: 4H-silicon carbide (4H-SiC) trench gate MOSFET, breakdown voltage (V_BR), specific on-resistance (R_on,sp), switching energy loss, super-junction

中图分类号: (Semiconductor devices)

85.30.-z

85.30.De (Semiconductor-device characterization, design, and modeling)

Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501.

Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. Chin. Phys. B, 2022, 31(7): 78501-078501.

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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance

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