Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

doi:10.1088/1674-1056/ac8e99

中国物理B ›› 2023, Vol. 32 ›› Issue (1): 17306-017306.doi: 10.1088/1674-1056/ac8e99

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋)^†, and Qi Yu(于奇)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2022-06-24 修回日期:2022-08-19 接受日期:2022-09-02 出版日期:2022-12-08 发布日期:2023-01-03
通讯作者: Jiangfeng Du E-mail:jfdu@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61376078) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0515).

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋)^†, and Qi Yu(于奇)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2022-06-24 Revised:2022-08-19 Accepted:2022-09-02 Online:2022-12-08 Published:2023-01-03
Contact: Jiangfeng Du E-mail:jfdu@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376078) and the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0515).

摘要/Abstract

摘要： A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V.

关键词: GaN junction barrier Schottky diode, compound dielectric, breakdown voltage, turn-on voltage

Abstract: A vertical junction barrier Schottky diode with a high-$K$/low-$K$ compound dielectric structure is proposed and optimized to achieve a high breakdown voltage (BV). There is a discontinuity of the electric field at the interface of high-$K$ and low-$K$ layers due to the different dielectric constants of high-$K$ and low-$K$ dielectric layers. A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode (JBS), so the distribution of electric field in JBS becomes more uniform. At the same time, the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-$K$ dielectric layer and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN JBS with a specific on-resistance ($R_{\rm on, sp}$) of 2.07 m$\Omega\cdot$cm$^{2}$ and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure, resulting in a high figure-of-merit (FOM) of 8.6 GW/cm$^{2}$, and a low turn-on voltage of 0.6 V.

Key words: GaN junction barrier Schottky diode, compound dielectric, breakdown voltage, turn-on voltage

中图分类号: (III-V semiconductors)

73.61.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 77.22.Ch (Permittivity (dielectric function)) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))

Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.

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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

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