中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/abe0c7

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Design and simulation of AlN-based vertical Schottky barrier diodes

Chun-Xu Su(苏春旭)1, Wei Wen(温暐)2, Wu-Xiong Fei(费武雄)2, Wei Mao(毛维)1, Jia-Jie Chen(陈佳杰)3, Wei-Hang Zhang(张苇杭)1,†, Sheng-Lei Zhao(赵胜雷)1, Jin-Cheng Zhang(张进成)1,‡, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3 Shanghai Academy of Spaceflight Technology, Shanghai 201109, China
  • 收稿日期:2020-11-20 修回日期:2021-01-06 接受日期:2021-01-28 出版日期:2021-05-18 发布日期:2021-06-01
  • 通讯作者: Wei-Hang Zhang, Jin-Cheng Zhang E-mail:whzhang@xidian.edu.cn;jchzhang@xidian.edu.cn
  • 基金资助:
    Project supported by Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002) and Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123).

Design and simulation of AlN-based vertical Schottky barrier diodes

Chun-Xu Su(苏春旭)1, Wei Wen(温暐)2, Wu-Xiong Fei(费武雄)2, Wei Mao(毛维)1, Jia-Jie Chen(陈佳杰)3, Wei-Hang Zhang(张苇杭)1,†, Sheng-Lei Zhao(赵胜雷)1, Jin-Cheng Zhang(张进成)1,‡, and Yue Hao(郝跃)1   

  1. 1 Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
    2 China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China;
    3 Shanghai Academy of Spaceflight Technology, Shanghai 201109, China
  • Received:2020-11-20 Revised:2021-01-06 Accepted:2021-01-28 Online:2021-05-18 Published:2021-06-01
  • Contact: Wei-Hang Zhang, Jin-Cheng Zhang E-mail:whzhang@xidian.edu.cn;jchzhang@xidian.edu.cn
  • Supported by:
    Project supported by Key-Area Research and Development Program of Guangdong Province, China (Grant Nos. 2020B010174001 and 2020B010171002) and Ningbo Science and Technology Innovation 2025 (Grant No. 2019B10123).

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摘要： The key parameters of vertical AlN Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated. The specific on-resistance (Ron,sp) decreased to 0.5 mΩ·cm2 and the breakdown voltage (VBR) decreased from 3.4 kV to 1.1 kV by changing the DLC from 1015 cm-3 to 3×1016 cm-3. The VBR increases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ·cm2 by increasing DLT from 4-μ to 11-μ. The VBR enhancement results from the increase of depletion region extension. The Baliga's figure of merit (BFOM) of 3.8 GW/cm2 was obtained in the structure of 11-μ DLT and 1016 cm-3 DLC without FP. When DLT or DLC is variable, the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate (FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.

关键词: aluminum nitride, Schottky barrier diodes, specific on-resistance Ron, sp, breakdown voltage VBR

Abstract: The key parameters of vertical AlN Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated. The specific on-resistance (Ron,sp) decreased to 0.5 mΩ·cm2 and the breakdown voltage (VBR) decreased from 3.4 kV to 1.1 kV by changing the DLC from 1015 cm-3 to 3×1016 cm-3. The VBR increases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ·cm2 by increasing DLT from 4-μ to 11-μ. The VBR enhancement results from the increase of depletion region extension. The Baliga's figure of merit (BFOM) of 3.8 GW/cm2 was obtained in the structure of 11-μ DLT and 1016 cm-3 DLC without FP. When DLT or DLC is variable, the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate (FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.

Key words: aluminum nitride, Schottky barrier diodes, specific on-resistance Ron, sp, breakdown voltage VBR

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
73.30.+y (Surface double layers, Schottky barriers, and work functions) 51.50.+v (Electrical properties)