中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68505-068505.doi: 10.1088/1674-1056/21/6/068505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

龚长春, 范广涵, 张运炎, 许毅钦, 刘小平, 郑树文, 姚光锐, 周德涛   

  1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2011-06-24 修回日期:2011-11-14 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the Project of Combination of Production and Research Guided by Education Ministry of China in 2009 (Grant No. 2009B090300338) and the LED Industrial Projects of Special Funds Strategic Emerging Industries in 2011, Guangdong Province, China (Grant No. 2010A081002005).

The influence of AlGaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes

Gong Chang-Chun(龚长春), Fan Guang-Han(范广涵)†, Zhang Yun-Yan(张运炎), Xu Yi-Qin(许毅钦), Liu Xiao-Ping(刘小平), Zheng Shu-Wen(郑树文), Yao Guang-Rui(姚光锐), and Zhou De-Tao(周德涛)   

  1. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
  • Received:2011-06-24 Revised:2011-11-14 Online:2012-05-01 Published:2012-05-01
  • Contact: Fan Guang-Han E-mail:gfan@scnu.edu.cn
  • Supported by:
    Project supported by the Project of Combination of Production and Research Guided by Education Ministry of China in 2009 (Grant No. 2009B090300338) and the LED Industrial Projects of Special Funds Strategic Emerging Industries in 2011, Guangdong Province, China (Grant No. 2010A081002005).

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摘要： P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons: (i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices, and (ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.

关键词: P-AlGaN/P-GaN superlattices, numerical simulation, efficiency droop

Abstract: P-AlGaN/P-GaN superlattices are investigated in blue InGaN light-emitting diodes as electron blocking layers. The simulation results show that efficiency droop is markedly improved due to two reasons: (i) enhanced hole concentration and hole carrier transport efficiency in AlGaN/GaN superlattices, and (ii) enhanced blocking of electron overflow between multiple quantum-wells and AlGaN/GaN superlattices.

Key words: P-AlGaN/P-GaN superlattices, numerical simulation, efficiency droop

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.50.-n (Dielectric, ferroelectric, and piezoelectric devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)