A novel power UMOSFET with a variable K dielectric layer

doi:10.1088/1674-1056/21/6/068503

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68503-068503.doi: 10.1088/1674-1056/21/6/068503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A novel power UMOSFET with a variable K dielectric layer

王颖, 兰昊, 曹菲, 刘云涛, 邵雷

College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China

收稿日期:2011-10-24 修回日期:2011-11-11 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60906048), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052), and the Fundamental Research Funds for the Central Universities, China (Grant No. HEUCFT1008).

A novel power UMOSFET with a variable K dielectric layer

Wang Ying(王颖)^†, Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷)

College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China

Received:2011-10-24 Revised:2011-11-11 Online:2012-05-01 Published:2012-05-01
Contact: Wang Ying E-mail:wangying7711@yahoo.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60906048), the Program for New Century Excellent Talents in University, China (Grant No. NCET-10-0052), and the Fundamental Research Funds for the Central Universities, China (Grant No. HEUCFT1008).

摘要/Abstract

摘要： A novel split-gate power UMOSFET with a variable K dielectric layer is proposed. This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V, as compared with the SGE-UMOS device. Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Q_g ? R_ON and BV²/R_ON, as compared with the previous power UMOSFET.

关键词: specific on-resistance, power UMOSFET, split gate, variable K dielectric layer

Abstract: A novel split-gate power UMOSFET with a variable K dielectric layer is proposed. This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V, as compared with the SGE-UMOS device. Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Q_g ? R_ON and BV²/R_ON, as compared with the previous power UMOSFET.

Key words: specific on-resistance, power UMOSFET, split gate, variable K dielectric layer

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

王颖, 兰昊, 曹菲, 刘云涛, 邵雷. A novel power UMOSFET with a variable K dielectric layer[J]. 中国物理B, 2012, 21(6): 68503-068503.

Wang Ying(王颖), Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷) . A novel power UMOSFET with a variable K dielectric layer[J]. Chin. Phys. B, 2012, 21(6): 68503-068503.

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A novel power UMOSFET with a variable K dielectric layer

A novel power UMOSFET with a variable K dielectric layer

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