Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

doi:10.1088/1674-1056/28/5/058503

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 58503-058503.doi: 10.1088/1674-1056/28/5/058503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南)

School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China

收稿日期:2018-12-19 修回日期:2019-03-06 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南)

School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China

Received:2018-12-19 Revised:2019-03-06 Online:2019-05-05 Published:2019-05-05
Contact: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61404110) and the National Higher-education Institution General Research and Development Project, China (Grant No. 2682014CX097).

摘要/Abstract

摘要：

A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to enhance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz-Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.

关键词: conformal mapping, Schwarz-Christoffel transformation, electric field, trench metal-oxide-semiconductor field-effect transistor (MOSFET), breakdown voltage

Abstract:

Key words: conformal mapping, Schwarz-Christoffel transformation, electric field, trench metal-oxide-semiconductor field-effect transistor (MOSFET), breakdown voltage

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

51.50.+v (Electrical properties)

汪志刚, 廖涛, 王亚南. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation[J]. 中国物理B, 2019, 28(5): 58503-058503.

Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南). Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation[J]. Chin. Phys. B, 2019, 28(5): 58503-058503.

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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation

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