Modeling of high permittivity insulator structure with interface charge by charge compensation

doi:10.1088/1674-1056/ac0cd3

中国物理B ›› 2022, Vol. 31 ›› Issue (2): 28501-028501.doi: 10.1088/1674-1056/ac0cd3

Modeling of high permittivity insulator structure with interface charge by charge compensation

Zhi-Gang Wang(汪志刚)^†, Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮)

School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China

收稿日期:2021-04-23 修回日期:2021-06-15 接受日期:2021-06-21 出版日期:2022-01-13 发布日期:2022-01-25
通讯作者: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn

Modeling of high permittivity insulator structure with interface charge by charge compensation

Zhi-Gang Wang(汪志刚)^†, Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮)

School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China

Received:2021-04-23 Revised:2021-06-15 Accepted:2021-06-21 Online:2022-01-13 Published:2022-01-25
Contact: Zhi-Gang Wang E-mail:zhigangwang@swjtu.edu.cn

摘要/Abstract

摘要： An analytical model of the power metal-oxide-semiconductor field-effect transistor (MOSFET) with high permittivity insulator structure (HKMOS) with interface charge is established based on superposition and developed for optimization by charge compensation. In light of charge compensation, the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage (BV) and minimizing specific ON-resistance (R_on,sp). From this optimization method, it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_on,sp-BV trade-off for quick design. The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region, the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and R_on,sp with JFET effect taken into account.

关键词: charge compensation, breakdown voltage, high permittivity, interface charge, super-junction

Abstract: An analytical model of the power metal-oxide-semiconductor field-effect transistor (MOSFET) with high permittivity insulator structure (HKMOS) with interface charge is established based on superposition and developed for optimization by charge compensation. In light of charge compensation, the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage (BV) and minimizing specific ON-resistance (R_on,sp). From this optimization method, it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_on,sp-BV trade-off for quick design. The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region, the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and R_on,sp with JFET effect taken into account.

Key words: charge compensation, breakdown voltage, high permittivity, interface charge, super-junction

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

51.50.+v (Electrical properties)

Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Modeling of high permittivity insulator structure with interface charge by charge compensation[J]. 中国物理B, 2022, 31(2): 28501-028501.

Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Modeling of high permittivity insulator structure with interface charge by charge compensation[J]. Chin. Phys. B, 2022, 31(2): 28501-028501.

参考文献

[1] Wang Y, Wang Z, Bai T and Kuo J B 2018 Trans. Electron Dev. 65 1056
[2] Mao S J, Zhu Z Y, Wang G L, Zhu H L, Li J F and Zhao C 2016 Chin. Phys. Lett. 33 118502
[3] Yao J F, Guo Y F, Zhang Z Y, Yang K M, Zhang M L and Xia T 2020 Chin. Phys. B 29 038503
[4] Wu L J, Zhang Z J, Song Y, Yang H, Hu L M and Yuan N 2017 Chin. Phys. B 26 027101
[5] Wang C L and Sun J 2009 Chin. Phys. B 18 1231
[6] Chen X and Huang M 2012 Trans. Electron Dev. 59 2430
[7] Huang J Q, He W W, Chen J, Luo J X, Lu K and Chai Z 2016 Chin. Phys. Lett 33 096101
[8] Guan H, Lv H L, Guo H, Zhang Y M, Zhang Y M and Wu L F 2015 Chin. Phys. B 24 126701
[9] Wang Z, Wang X and Kuo J B 2018 Trans. Electron Dev. 65 4947
[10] Zhang W, Zhang B, Qiao M, Luo X and Li Z 2016 Trans. Electron Dev. 64 224
[11] Chen X, Wang Z, Wang X and Kuo J B 2018 Chin. Phys. B 27 048502
[12] Qi L W, Meng J, Liu X Y, Weng Y, Liu Z C, Zhang D H, Zhou J T and Jin Z 2020 Chin. Phys. B 29 104212
[13] Hu S, Yang L, Mi M H, Hou B, Liu S, Zhang M, Wu M, Zhu Q, Wu S, Lu Y, Zhu J J, Zhou X W, Lv L, Ma X H and Hao Y 2020 Chin. Phys. B 29 087305
[14] Wang Z G, Zhang B, Fu Q, Xie G and Li Z J 2012 IEEE Electron Dev. Lett. 33 703
[15] Ren M, Li Z H, Deng G M, Zhang L X, Zhang M, Liu X L, Xie J X and Zhang B 2012 Chin. Phys. B 21 048502
[16] Huang H, Xu S, Xu W, Hu K, Cheng J, Hu H and Yi B 2020 Trans. Electron Dev. 67 2463
[17] Huang H, Hu K, Xu W, Xu S, Cui W, Zhang W and Ng W T 2020 Trans. Electron Dev. 67 3898
[18] Wangsness R K 1979 Electromagnetic fields (New York:Wiley)
[19] Baliga B J 2010 Fundamentals of power semiconductor devices (Berlin:Springer Science & Business Media)
[20] Hou X Y, Huang R, Chen G, Liu S, Zhang X, Yu B and Wang Y Y 2008 Chin. Phys. B 17 0685
[21] Chen S Z and Sheng K 2014 Chin. Phys. B 23 077201
[22] Zhang W, Zhang B, Qiao M, Li Z, Luo X and Li Z 2016 Trans. Electron Dev. 63 1984

Modeling of high permittivity insulator structure with interface charge by charge compensation

Modeling of high permittivity insulator structure with interface charge by charge compensation

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.
[2]	Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502.
[3]	Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501.
[4]	Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench[J]. 中国物理B, 2022, 31(4): 47304-047304.
[5]	Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302.
[6]	Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰). Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness[J]. 中国物理B, 2021, 30(6): 67303-067303.
[7]	Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305.
[8]	Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A super-junction SOI-LDMOS with low resistance electron channel[J]. 中国物理B, 2021, 30(5): 57303-057303.
[9]	Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Improved 4H-SiC UMOSFET with super-junction shield region[J]. 中国物理B, 2021, 30(5): 58502-058502.
[10]	费新星, 王颖, 罗昕, 于成浩. Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. 中国物理B, 2020, 29(8): 80701-080701.
[11]	吴丽娟, 朱琳, 陈星. Variable-K double trenches SOI LDMOS with high-concentration P-pillar[J]. 中国物理B, 2020, 29(5): 57701-057701.
[12]	姚佳飞, 郭宇锋, 张振宇, 杨可萌, 张茂林, 夏天. Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars[J]. 中国物理B, 2020, 29(3): 38503-038503.
[13]	王中旭, 杜林, 刘俊伟, 王颖, 江芸, 季思蔚, 董士伟, 陈伟伟, 谭骁洪, 李金龙, 李小军, 赵胜雷, 张进成, 郝跃. Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height[J]. 中国物理B, 2020, 29(2): 27301-027301.
[14]	汪志刚, 廖涛, 王亚南. Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation[J]. 中国物理B, 2019, 28(5): 58503-058503.
[15]	李琦, 张昭阳, 李海鸥, 孙堂友, 陈永和, 左园. Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate[J]. 中国物理B, 2019, 28(3): 37201-037201.