Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

doi:10.1088/1674-1056/ab592f

Abstract High-quality type I!Ia large diamond crystals are synthesized with Ti/Cu as nitrogen getter doped in an FeNi-C system at temperature ranging from 1230 ℃ to 1380 ℃ and at pressure 5.3-5.9 GPa by temperature gradient method. Different ratios of Ti/Cu are added to the FeNi-C system to investigate the best ratio for high-quality type I!Ia diamond. Then, the different content of nitrogen getter Ti/Cu (Ti:Cu=4:3) is added to this synthesis system to explore the effect on diamond growth. The macro and micro morphologies of synthesized diamonds with Ti/Cu added, whose nitrogen concentration is determined by Fourier transform infrared (FTIR), are analyzed by optical microscopy (OM) and scanning electron microscopy (SEM), respectively. It is found that the inclusions in the obtained crystals are minimal when the Ti/Cu ratio is 4:3. Furthermore, the temperature interval for diamond growth becomes narrower when using Ti as the nitrogen getter. Moreover, the lower edge of the synthesis temperature of type IIa diamond is 25 ℃ higher than that of type Ib diamond. With the increase of the content of Ti/Cu (Ti:Cu=4:3), the color of the synthesized crystals changes from yellow and light yellow to colorless. When the Ti/Cu content is 1.7 wt%, the nitrogen concentration of the crystal is less than 1 ppm. The SEM results show that the synthesized crystals are mainly composed by (111) and (100) surfaces, including (311) surface, when the nitrogen getter is added into the synthesis system. At the same time, there are triangular pits and dendritic growth stripes on the crystal surface. This work will contribute to the further research and development of high-quality type I!Ia diamond.

Keywords: high temperature and high pressure temperature gradient method type I!Ia diamond

Received: 20 September 2019
Revised: 12 November 2019
Accepted manuscript online:

PACS:	81.05.ug	(Diamond)
	61.72.S-	(Impurities in crystals)
	61.05.C-	(X-ray diffraction and scattering)
	07.35.+k	(High-pressure apparatus; shock tubes; diamond anvil cells)

Fund: Project supported by the Natural Science Foundation of Henan Province of China (Grant No. 182300410279), the Key Science and Technology Research Project of Henan Province of China (Grant No. 182102210311), the Key Scientific Research Project in Colleges and Universities of Henan Province of China (Grant Nos. 18A430017 and 20B140009), the Fundamental Research Funds for the Universities of Henan Province of China (Grant No. NSFRF180408), and the Fund for the Innovative Research Team (in Science and Technology) in the University of Henan Province of China (Grant No. 19IRTSTHN027).

Corresponding Authors: Shang-Sheng Li
E-mail: lishsh@hpu.edu.cn,lss_2006@126.com

Cite this article:

Ming-Ming Guo(郭明明), Shang-Sheng Li(李尚升), Mei-Hua Hu(胡美华), Tai-Chao Su(宿太超), Jun-Zuo Wang(王君卓), Guang-Jin Gao(高广进), Yue You(尤悦), Yuan Nie(聂媛) Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system 2020 Chin. Phys. B 29 018101

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Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi-C system

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