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Synthesis of large diamond crystals containing high-nitrogen concentration at high pressure and high temperature using Ni-based solvent by temperature gradient method |
Huang Guo-Feng(黄国锋)a), Jia Xiao-Peng(贾晓鹏)a)b), Li Shang-Sheng(李尚升)b), Zhang Ya-Fei(张亚飞)a), Li Yong(李勇)a), Zhao Ming(赵明)a), and Ma Hong-An(马红安)a)† |
a National Lab of Superhard Materials, Jilin University, Jilin 130012, China; b Henan Polytechnic University, Jiaozuo 454000, China |
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Abstract This paper reprots that with Ni-based catalyst/solvent and with a dopant of NaN3, large green single crystal diamonds with perfect shape are successfully synthesized by temperature gradient method under high pressure and high temperature in a China-type cubic anvil high-pressure apparatus (SPD-6×1200), and the highest nitrogen concentration reaches approximately 1214-1257 ppm calculated by infrared absorption spectra. The synthesis conditions are about 5.5 GPa and 1240-1300 ℃. The growth behaviour of diamond with high-nitrogen concentration is investigated in detail. The results show that, with increasing the content of NaN3 added in synthesis system, the width of synthesis temperature region for growth high-quality diamonds becomes narrower, and the morphology of diamond crystal is changed from cube-octahedral to octahedral at same temperature and pressure, the crystal growth rate is slowed down, nevertheless, the nitrogen concentration doped in synthetic diamond increases.
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Received: 19 March 2010
Revised: 12 May 2010
Accepted manuscript online:
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PACS:
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61.72.S-
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(Impurities in crystals)
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62.50.-p
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(High-pressure effects in solids and liquids)
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81.10.Dn
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(Growth from solutions)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50572032). |
Cite this article:
Huang Guo-Feng(黄国锋), Jia Xiao-Peng(贾晓鹏), Li Shang-Sheng(李尚升), Zhang Ya-Fei(张亚飞), Li Yong(李勇), Zhao Ming(赵明), and Ma Hong-An(马红安) Synthesis of large diamond crystals containing high-nitrogen concentration at high pressure and high temperature using Ni-based solvent by temperature gradient method 2010 Chin. Phys. B 19 118101
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