Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (8): 088502    DOI: 10.1088/1674-1056/26/8/088502
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Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
Jin-Xin Zhang(张晋新)1, Chao-Hui He(贺朝会)2, Hong-Xia Guo(郭红霞)3, Pei Li(李培)2, Bao-Long Guo(郭宝龙)1, Xian-Xiang Wu(吴宪祥)1
1 School of Aerospace Science and Technology, Xidian University, Xi' an 710126, China;
2 School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China;
3 Northwest Institution of Nuclear Technology, Xi'an 710024, China

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