High performance trench MOS barrier Schottky diode with high-k gate oxide

doi:10.1088/1674-1056/24/7/077201

Abstract

A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.

Keywords: trench MOS barrier Schottky diode high-k gate oxide leakage current

Received: 21 January 2015
Revised: 16 February 2015
Accepted manuscript online:

PACS:	72.20.-i	(Conductivity phenomena in semiconductors and insulators)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

Corresponding Authors: Zhao Yi
E-mail: yizhao@zju.edu.cn

Cite this article:

Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓) High performance trench MOS barrier Schottky diode with high-k gate oxide 2015 Chin. Phys. B 24 077201

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