Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

doi:10.1088/1674-1056/22/5/058104

Abstract Self-assembled Ge nanodots with areal number density up to 2.33×10¹⁰ cm^-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when high ion energy is employed in sputtering deposition, and is shown to be related with the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates island nucleation.

Keywords: Ge nanodot self-organization ion beam sputtering deposition adatom behavior

Received: 18 July 2012
Revised: 23 November 2012
Accepted manuscript online:

PACS:	81.07.Ta	(Quantum dots)
	68.38.Md
	68.37.Ps	(Atomic force microscopy (AFM))
	78.30.-j	(Infrared and Raman spectra)

Fund: Project supported by the Joint Fund of National Natural Science Foundation of China and Yunnan Province, China (Grant No. U1037604), the Applied Basic Research Foundations of Yunnan Province, China (Grant No. 2009CD003), and the Scientific Research Foundation of Yunnan University, China (Grant No. 2009E28Q).

Corresponding Authors: Xiong Fei, Yang Pei-Zhi
E-mail: f_xiong888@yahoo.com.cn; pzhyang@hotmail.com

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Xiong Fei (熊飞), Yang Tao (杨涛), Song Zhao-Ning (宋肇宁), Yang Pei-Zhi (杨培志) Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition 2013 Chin. Phys. B 22 058104

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Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

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