Chin. Phys. B
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Chin. Phys. B  2013, Vol. 22 Issue (4): 045204    DOI: 10.1088/1674-1056/22/4/045204
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Current Issue| Next Issue| Archive| Adv Search |
The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations
Liu Xiang-Meia, Song Yuan-Hongb, Jiang Weia, Yi Lina
a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China

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