Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

doi:10.1088/1009-1963/16/5/045

Abstract

Abstract Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Keywords: spin polarization spin-polarized injection magnetic semiconductor p-n junction

Received: 24 September 2006
Revised: 14 December 2006
Accepted manuscript online:

PACS:	72.25.Dc	(Spin polarized transport in semiconductors)
	72.25.Mk	(Spin transport through interfaces)
	75.10.-b	(General theory and models of magnetic ordering)
	75.50.Pp	(Magnetic semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 60606021), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No~20060003067) and the Key Fundamental Research Foundation of Tsinghua U

Cite this article:

Zhang Lei(张磊), Deng Ning(邓宁), Ren Min(任敏), Dong Hao(董浩), and Chen Pei-Yi(陈培毅) Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction 2007 Chinese Physics 16 1440

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Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

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