Abstract A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiNx:H/a-Si:H/a-SiNx:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.
Received: 06 January 2000
Revised: 13 March 2000
Accepted manuscript online:
PACS:
42.55.Lt
(Gas lasers including excimer and metal-vapor lasers)
Fund: Project supported by the National Natural Science Foundation of China(Grant Nos. 69876019, 69676008 and 69890225) and by the Natural Science Foundation of Jiangsu Province (Grant No. BK97021).
Cite this article:
Li Jian (李健), Wang Li (王立), Huang Xin-fan (黄信凡), Jiang Ming (蒋明), Li Wei (李伟), Wang Zhao-ye (王朝晔), Xu Jun (徐骏), Liu Zhi-guo (刘治国), Chen Kun-ji (陈坤基) FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS 2000 Chinese Physics 9 537
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