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Chin. Phys. B, 2015, Vol. 24(7): 077201    DOI: 10.1088/1674-1056/24/7/077201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

High performance trench MOS barrier Schottky diode with high-k gate oxide

Zhai Dong-Yuana b, Zhu Junb, Zhao Yia c, Cai Yin-Feid, Shi Yib, Zheng You-Liaob
a Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
b School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
d Hangzhou QP Chip Technology Co. Ltd, Hangzhou 311121, China
Abstract  

A novel trench MOS barrier Schottky diode (TMBS) device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.

Keywords:  trench MOS barrier Schottky diode      high-k gate oxide      leakage current  
Received:  21 January 2015      Revised:  16 February 2015      Published:  05 July 2015
PACS:  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
  73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
Fund: 

Project supported by the National Basic Research Program of China (Grant No. 2011CBA00607), the National Natural Science Foundation of China (Grant Nos. 61106089 and 61376097), and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LR14F040001).

Corresponding Authors:  Zhao Yi     E-mail:  yizhao@zju.edu.cn

Cite this article: 

Zhai Dong-Yuan, Zhu Jun, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Liao High performance trench MOS barrier Schottky diode with high-k gate oxide 2015 Chin. Phys. B 24 077201

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