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Chin. Phys. B, 2009, Vol. 18(6): 2205-2208    DOI: 10.1088/1674-1056/18/6/016
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Spin-filtering junctions with double ferroelectric barriers

Ju Yan(鞠艳) and Xing Ding-Yu(邢定钰)
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Abstract  An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.
Keywords:  ferroelectric barrier      tunnel junction      spin detection  
Received:  25 November 2008      Revised:  19 December 2008      Accepted manuscript online: 
PACS:  72.25.Mk (Spin transport through interfaces)  
  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  75.50.Pp (Magnetic semiconductors)  
Fund: Project supported by the State Key Program for Basic Research of China (Grant Nos 2009CB929504, 2006CB921803 and 2004CB619004).

Cite this article: 

Ju Yan(鞠艳) and Xing Ding-Yu(邢定钰) Spin-filtering junctions with double ferroelectric barriers 2009 Chin. Phys. B 18 2205

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