Disorder effects in topological states: Brief review of the recent developments

doi:10.1088/1674-1056/25/11/117311

Abstract

Disorder inevitably exists in realistic samples, manifesting itself in various exotic properties for the topological states. In this paper, we summarize and briefly review the work completed over the last few years, including our own, regarding recent developments in several topics about disorder effects in topological states. For weak disorder, the robustness of topological states is demonstrated, especially for both quantum spin Hall states with Z₂=1 and size induced nontrivial topological insulators with Z₂=0. For moderate disorder, by increasing the randomness of both the impurity distribution and the impurity induced potential, the topological insulator states can be created from normal metallic or insulating states. These phenomena and their mechanisms are summarized. For strong disorder, the disorder causes a metal-insulator transition. Due to their topological nature, the phase diagrams are much richer in topological state systems. Finally, the trends in these areas of disorder research are discussed.

Keywords: topological states disorder effects topological Anderson insulator metal-insulator transition

Received: 29 April 2016
Revised: 02 June 2016
Accepted manuscript online:

PACS:	73.61.-r	(Electrical properties of specific thin films)
	71.23.-k	(Electronic structure of disordered solids)
	73.43.-f	(Quantum Hall effects)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374219, 11474085, and 11534001) and the Natural Science Foundation of Jiangsu Province, China (Grant No BK20160007).

Corresponding Authors: Hua Jiang
E-mail: jianghuaphy@suda.edu.cn

Cite this article:

Binglan Wu(吴冰兰), Juntao Song(宋俊涛), Jiaojiao Zhou(周娇娇), Hua Jiang(江华) Disorder effects in topological states: Brief review of the recent developments 2016 Chin. Phys. B 25 117311

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