The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

doi:10.1088/1674-1056/22/6/068401

Abstract A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships (VCRs) between two parallel memristive circuits, i.e., parallel memristor and capacitor circuit (called as parallel MC circuit), and parallel memristor and inductor circuit (called as parallel ML circuit), are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. Equivalent circuit model of the memristor is built, upon which the circuit simulations and experimental measurements of both parallel MC circuit and parallel ML circuit are performed, of which the results verify the theoretical analysis results.

Keywords: flux-controlled memristor memristor and capacitor (MC) circuit memristor and inductor (ML) circuit equivalent circuit

Received: 28 September 2012
Revised: 27 November 2012
Accepted manuscript online:

PACS:	84.30.Bv	(Circuit theory)
	84.30.-r	(Electronic circuits)
	05.45.-a	(Nonlinear dynamics and chaos)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51277017) and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012583).

Corresponding Authors: Bao Bo-Cheng
E-mail: mervinbao@126.com

Cite this article:

Bao Bo-Cheng (包伯成), Feng Fei (冯霏), Dong Wei (董伟), Pan Sai-Hu (潘赛虎) The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits 2013 Chin. Phys. B 22 068401

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The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

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