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Chin. Phys. B, 2020, Vol. 29(4): 048104    DOI: 10.1088/1674-1056/ab7d9c
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate

Minglong Zhao(赵明龙)1,2,3, Xiansheng Tang(唐先胜)1,2,3, Wenxue Huo(霍雯雪)1,2,3, Lili Han(韩丽丽)1,2,3, Zhen Deng(邓震)1,3,5, Yang Jiang(江洋)1,3, Wenxin Wang(王文新)1,3,4, Hong Chen(陈弘)1,3,4, Chunhua Du(杜春花)1,3,5, Haiqiang Jia(贾海强)1,3,4
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China;
5 The Yangtze River Delta Physics Research Center, Liyang 213000, China
Abstract  We have successfully prepared GaN based high electron mobility transistors (HEMTs) on metallic substrates transferred from silicon substrates by electroplating technique. GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates. Furthermore, the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging, showing the promising potential for very high-power and high-temperature operation. This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity, high yield, and low production requirement.
Keywords:  GaN high electron mobility transistor (HEMT)      electric characteristics      electroplating      heat dissipation  
Received:  09 January 2020      Revised:  01 March 2020      Published:  05 April 2020
PACS:  81.05.Ea (III-V semiconductors)  
  81.15.Pq (Electrodeposition, electroplating)  
  44.15.+a (Channel and internal heat flow)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61704008 and 11574362).
Corresponding Authors:  Haiqiang Jia     E-mail:  mbe2@iphy.ac.cn

Cite this article: 

Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate 2020 Chin. Phys. B 29 048104

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