Time-dependent crosstalk effects for image sensors with different isolation structures

doi:10.1088/1674-1056/27/8/088503

Abstract Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially noticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isolation structures are investigated. According to the different depths of photo-diode (PD) and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.

Keywords: image sensor crosstalk pixel isolation

Received: 22 February 2018
Revised: 16 April 2018
Accepted manuscript online:

PACS:

85.60.-q

(Optoelectronic devices)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. NKRDP 2016YFA0202101).

Corresponding Authors: Xiao-Yan Liu
E-mail: xyliu@ime.pku.edu.cn

Cite this article:

Lei Shen(沈磊), Li-Qiao Liu(刘力桥), Hao Hao(郝好), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦) Time-dependent crosstalk effects for image sensors with different isolation structures 2018 Chin. Phys. B 27 088503

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