Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

doi:10.1088/1674-1056/abc53f

Abstract A novel CMOS image sensor (CIS) pinned photodiode (PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate (OG) and the temporary storage diffusing (TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node (FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.

Keywords: CMOS image sensor charge transfer efficiency high-speed charge transfer pinned photodiode

Received: 12 August 2020
Revised: 09 October 2020
Accepted manuscript online: 28 October 2020

PACS:	85.30.-z	(Semiconductor devices)
	95.55.Aq	(Charge-coupled devices, image detectors, and IR detector arrays)
	07.07.Df	(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61574112).

Corresponding Authors: ^†Corresponding author. E-mail: mwxidian@126.com

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Cui Yang(杨翠), Guo-Liang Peng(彭国良), Wei Mao(毛维), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node 2021 Chin. Phys. B 30 018502

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Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

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