N-type GaSb single crystals with high below-band gap transmission

doi:10.1088/1674-1056/26/10/107801

Abstract

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.

Keywords: Te-doped GaSb infrared transmission native defects PL

Received: 08 March 2017
Revised: 14 June 2017
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	78.30.-j	(Infrared and Raman spectra)
	78.55.-m	(Photoluminescence, properties and materials)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

Corresponding Authors: You-Wen Zhao
E-mail: zhaoyw@semi.ac.cn

Cite this article:

Yong-Biao Bai(白永彪), You-Wen Zhao(赵有文), Gui-Ying Shen(沈桂英), Xiao-Yu Chen(陈晓玉), Jing-Ming Liu(刘京明), Hui Xie(谢晖), Zhi-Yuan Dong(董志远), Jun Yang(杨俊), Feng-Yun Yang(杨凤云), Feng-Hua Wang(王凤华) N-type GaSb single crystals with high below-band gap transmission 2017 Chin. Phys. B 26 107801

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