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Chin. Phys. B, 2016, Vol. 25(10): 108101    DOI: 10.1088/1674-1056/25/10/108101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Li-Fan Wu(武利翻)1,2, Yu-Ming Zhang(张玉明)1, Hong-Liang Lv(吕红亮)1, Yi-Men Zhang(张义门)1
1 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China;
2 School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
Abstract  Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10-6 A/cm2 and 3.22×10-6A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Qot) value and the interface state density (Dit).
Keywords:  high-k dielectric      atomic layer deposition      InAlAs      characteristics     
Received:  28 September 2015      Published:  05 October 2016
PACS:  81.05.Ea (III-V semiconductors)  
  77.55.+f  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).
Corresponding Authors:  Hong-Liang Lv     E-mail:  hllv@mail.xidian.edu.cn

Cite this article: 

Li-Fan Wu(武利翻), Yu-Ming Zhang(张玉明), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门) Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics 2016 Chin. Phys. B 25 108101

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