Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

doi:10.1088/1674-1056/25/10/108101

Abstract Al₂O₃ and HfO₂ thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al₂O₃ layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10^-6 A/cm² and 3.22×10^-6A/cm² at +1 V for the Al₂O₃/InAlAs and HfO₂/InAlAs MOS capacitors respectively. Compared with the HfO₂/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al₂O₃/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Q_ot) value and the interface state density (D_it).

Keywords: high-k dielectric atomic layer deposition InAlAs characteristics

Received: 28 September 2015
Revised: 15 June 2016
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	77.55.+f

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advance Research Project, China (Grant No. 513xxxxx306), the National Natural Science Foundation of China (Grant No. 51302215), the Scientific Research Program Funded by Shaanxi Provincial Education Department, China (Grant No. 14JK1656), and the Science and Technology Project of Shaanxi Province, China (Grant No. 2016KRM029).

Corresponding Authors: Hong-Liang Lv
E-mail: hllv@mail.xidian.edu.cn

Cite this article:

Li-Fan Wu(武利翻), Yu-Ming Zhang(张玉明), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门) Atomic-layer-deposited Al₂O₃ and HfO₂ on InAlAs: A comparative study of interfacial and electrical characteristics 2016 Chin. Phys. B 25 108101

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Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

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Atomic-layer-deposited Al₂O₃ and HfO₂ on InAlAs: A comparative study of interfacial and electrical characteristics