Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

doi:10.1088/1674-1056/24/8/088502

Abstract In this paper the single-event responses of the silicon germanium heterojunction bipolar transistors (SiGe HBTs) are investigated by TCAD simulations and laser microbeam experiment. A three-dimensional (3D) simulation model is established, the single event effect (SEE) simulation is further carried out on the basis of SiGe HBT devices, and then, together with the laser microbeam test, the charge collection behaviors are analyzed, including the single event transient (SET) induced transient terminal currents, and the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the nature of the current transient is controlled by the behaviors of the collector–substrate (C/S) junction and charge collection by sensitive electrodes, thereby giving out the sensitive area and electrode of SiGe HBT in SEE.

Keywords: SiGe heterojunction bipolar transistor single event effect three-dimensional numerical simulation laser microbeam experiment

Received: 29 January 2015
Revised: 21 March 2015
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	61.80.Az	(Theory and models of radiation effects)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	61.80.-x	(Physical radiation effects, radiation damage)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61274106).

Corresponding Authors: Guo Hong-Xia
E-mail: guohxnint@126.com

Cite this article:

Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信) Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 2015 Chin. Phys. B 24 088502

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Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment

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