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Chin. Phys. B, 2015, Vol. 24(4): 048504    DOI: 10.1088/1674-1056/24/4/048504

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang Zhi-Yun, Xie Hong-Yun, Zhang Liang-Hao, Zhang Wan-Rong, Hu Rui-Xin, Huo Wen-Juan
College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Abstract  In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.
Keywords:  uni-traveling-carrier      double hetero-junction phototransistor      optical responsivity      optical transition frequency     
Received:  09 September 2014      Published:  05 April 2015
PACS:  85.60.Dw (Photodiodes; phototransistors; photoresistors)  
  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  78.55.Cr (III-V semiconductors)  
  78.20.Bh (Theory, models, and numerical simulation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006044), the Natural Science Foundation of Beijing, China (Grant Nos. 4122014 and 4142007), and the Fund from the Beijing Municipal Education Committee, China (Grant No. KM200910005001).
Corresponding Authors:  Xie Hong-Yun     E-mail:

Cite this article: 

Jiang Zhi-Yun, Xie Hong-Yun, Zhang Liang-Hao, Zhang Wan-Rong, Hu Rui-Xin, Huo Wen-Juan Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor 2015 Chin. Phys. B 24 048504

[1] Polleux J, Paszkiewicz L and Billabert A 2004 IEEE Trans. M. T. T. 52 871
[2] Zhang S J, Wang H, Zou X H, Zhang Y L, Lu R G and Liu Y 2014 IEEE Photon. J. 6 5501008
[3] Khan H A and Rezazadeh A 2010 IET Optoelectron. 4 57
[4] Tan S W, Chen W T and Chu M Y 2003 Superlattices and Microstructures 33 209
[5] Kosmas T, Bernard W and Ortwin H 2006 J. Phys. D: Appl. Phys. 39 1805
[6] Beata S, Marek P and Artur B 2011 Central European Journal of Physics 9 1114
[7] Khan H A, Rezazadeh A A, Sohaib S and Tauqeer T 2012 IEEE J. Q. E. 48 576
[8] Zhang Y X, Liao Z Y and Wang W 2009 Chin. Phys. B 18 2393
[9] Pan H, Li Z and Campbell J C 2010 J. Lightwave Technol. 28 1184
[10] Fu Y, Pan H and Li Z IEEE 2011 IEEE J. Q. E. 47 1312
[11] Rouvalis E, Chtioui M and vanDijk F 2012 Opt. Express 20 20090
[12] Xue C L, Li C B, Liu Z, Cheng B W and Wang Q M 2013 Chin. Phys. B 22 118503
[13] Zhang S J, Zou X H, Zhang Y L, Zhang X X and Liu Y 2014 Microwave Opt. Technol. Lett. 56 427
[14] Huo W J, Xie H Y and Liang S 2013 Acta Phys. Sin. 62 228501 (in Chinese)
[15] Fukano H, Takanashi Y and Fujimoto M 1994 IEEE J. Q. E. 30 889-2895
[16] Kim J, Kanakaraju S and Johnson W B 2009 Electron. Lett. 45 649
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