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Chin. Phys. B, 2014, Vol. 23(4): 046104    DOI: 10.1088/1674-1056/23/4/046104
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

Yan Shao-Ana, Tang Ming-Huaa, Zhao Wenb, Guo Hong-Xiab, Zhang Wan-Lia, Xu Xin-Yua, Wang Xu-Donga, Ding Haoa, Chen Jian-Weia, Li Zhengc, Zhou Yi-Chuna
a Key Laboratory of Low Dimensional Materials and Application Technology of the Ministry of Education, Xiangtan University, Xiangtan 411105, China;
b Northwest Institute of Nuclear Technology, Xi'an 710024, China;
c Brookhaven National Laboratory, Upton, NY 11973, USA
Abstract  The single event effect in ferroelectric-gate field-effect transistor (FeFET) under heavy ion irradiation is investigated in this paper. The simulation results show that the transient responses are much lower in a FeFET than in a conventional metal-oxide-semiconductor field-effect transistor (MOSFET) when the ion strikes the channel. The main reason is that the polarization-induced charges (the polarization direction here is away from the silicon surface) bring a negative surface potential which will affect the distribution of carriers and charge collection in different electrodes significantly. The simulation results are expected to explain that the FeFET has a relatively good immunity to single event effect.
Keywords:  single event effect      heavy ion irradiation      charge collection      ferroelectric memory      FeFET  
Received:  03 June 2013      Revised:  22 September 2013      Accepted manuscript online: 
PACS:  61.80.Lj (Atom and molecule irradiation effects)  
  61.80.Jh (Ion radiation effects)  
  61.80.Az (Theory and models of radiation effects)  
  85.50.Gk (Non-volatile ferroelectric memories)  
Fund: Project supported by the KeyProject of the National Natural Science Foundation of China (Grant No. 11032010), the National Natural Science Foundation of China (Grant Nos. 51072171, 61274107, 61176093, and 11275163), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1080), the 973 Program, China (Grant No. 2012CB326404), the KeyProject of Natural Science Foundation of Hunan Province, China (Grant No. 13JJ2023), the KeyProject of Scientific Research Fund of Education Department of Hunan Province, China (Grant No. 12A129), the Innovation Foundation of Hunan Province of China for Postgraduate, China (Grant No. CX2013B261), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China.
Corresponding Authors:  Yan Shao-An, Tang Ming-Hua     E-mail:  yanshaoan@126.com;mhtang@xtu.edu.cn
About author:  61.80.Lj; 61.80.Jh; 61.80.Az; 85.50.Gk

Cite this article: 

Yan Shao-An, Tang Ming-Hua, Zhao Wen, Guo Hong-Xia, Zhang Wan-Li, Xu Xin-Yu, Wang Xu-Dong, Ding Hao, Chen Jian-Wei, Li Zheng, Zhou Yi-Chun Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation 2014 Chin. Phys. B 23 046104

[1] Park B H, Kang B S, Bu S D, Noh T W, Lee J and Jo W 1999 Nature 401 682
[2] Scott J F 2007 Science 315 954
[3] Scott J F 2001 Ferroelectric Memories (Berlin: Springer Verlag)
[4] Ishiwara H and Park B E 2003 Proc. Mat. Res. Soc. Symp. 748 61
[5] Han J P and Ma T P 1998 Appl. Phys. Lett. 72 1185
[6] Tang M H, Sun Z H, Zhou Y C, Sugiyama Y and Ishiwara H 2009 Appl. Phys. Lett. 94 212907
[7] Tang M H, Xu X L, Ye Z, Sugiyama Y and Ishiwara H 2011 IEEE Trans. Electron. Dev. 58 370
[8] Lee B C, Ipek E, Mutlu O and Burger D 2010 Commun. ACM 53 99
[9] Ho C H, Hsu C L, Chen C C, Liu J T, Wu C S, Huang C C, Hu C and Yang F L 2010 IEDM Dig. Tech. 19.11.11
[10] Munteanu D and Autran J L 2012 IEEE Trans. Nucl. Sci. 59 773
[11] Silvaco Inc. ATLAS User's Manual 2011http://www.silvaco.com.cn/products /tcad.html
[12] Miller S L and McWhorter P J 1992 J. Appl. Phys. 72 5999
[13] Juan T P, Chang C Y and Lee J Y 2006 IEEE Electron. Dev. Lett. 26 217
[14] Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[15] Liu Z, Chen S M, Chen J J, Qin J R and Liu R R 2012 Chin. Phys. B 21 099401
[16] Roy T, Witulski A F, Schrimpf R D, Alles M L and Massengill L W 2008 IEEE Trans. Nucl. Sci. 55 2948
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