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Chin. Phys. B, 2013, Vol. 22(8): 088701    DOI: 10.1088/1674-1056/22/8/088701
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

The laser-intensity dependence of the photoassociation spectrum of the ultracold Cs2(6S1/2+6P1/2) 0u+ long-range molecular state

Jin Li, Feng Guo-Sheng, Wu Ji-Zhou, Ma Jie, Wang Li-Rong, Xiao Lian-Tuan, Jia Suo-Tang
State Key Laboratory of Quantum Optics and Quantum Optics Devices, Laser Spectroscopy Laboratory, Shanxi University, Taiyuan 030006, China
Abstract  The high-resolution photoassociation spectrum of the ultracold cesium molecular 0u+ state below the 6S1/2+6P1/2 limit is presented in this paper. The saturation of the photoassociation scattering probability is observed from the dependence of the trap-loss probability on the photoassociation laser intensity. The corresponding resonant line width is also demonstrated to increase linearly with increasing photoassociation laser intensity. Our experimental data have good consistency with the theoretical saturation model of Bohn and Julienne [Bohn J L and Julienne P S 1999 Phys. Rev. A 60 1].
Keywords:  photoassociation spectrum      intensity dependence      high resolution  
Received:  22 November 2012      Revised:  10 January 2013      Published:  27 June 2013
PACS:  87.64.kv (Fluorescence)  
  42.62.Fi (Laser spectroscopy)  
  33.20.Vq (Vibration-rotation analysis)  
  33.70.Jg (Line and band widths, shapes, and shifts)  
Fund: Project supported by the National Basic Research Program of China (Grant No. 2012CB921603), the 863 Program (Grant No. 2011AA010801), the National Natural Science Foundation of China (Grant Nos. 61008012, 10934004, 60978001, 60978018, and 11174187), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12490), the National Natural Science Foundation of China for Excellent Research Team (Grant No. 61121064), the Natural Science Foundation of Shanxi Province, China (Grant Nos. 2011011004 and 2011081030), and the New Teacher Fund of the Ministry of Education of China (Grant No. 20101401120004).
Corresponding Authors:  Wang Li-Rong     E-mail:  wlr@sxu.edu.cn

Cite this article: 

Jin Li, Feng Guo-Sheng, Wu Ji-Zhou, Ma Jie, Wang Li-Rong, Xiao Lian-Tuan, Jia Suo-Tang The laser-intensity dependence of the photoassociation spectrum of the ultracold Cs2(6S1/2+6P1/2) 0u+ long-range molecular state 2013 Chin. Phys. B 22 088701

[1] Thorsheim H R, Weiner J and Julienne P S 1987 Phys. Rev. Lett. 58 2420
[2] Miller J D, Cline R A and Heinzen D J 1993 Phys. Rev. Lett. 71 2204
[3] Zhang W, Xie T, Huang Y, Wang G R and Cong S L 2013 Chin. Phys. B 22 013301
[4] Wang L R, Ji Z H, Yuan J P, Yang Y, Zhao Y T, Ma J, Xiao L T and Jia S T 2012 Chin. Phys. B 21 113402
[5] Zhang H S, Ji Z H, Yuan J P, Zhao Y T, Ma J, Wang L R, Xiao L T and Jia S T 2011 Chin. Phys. B 20 123702
[6] Peter S, Stephan D K, Jorg L, Roland W and Matthias W 2006 Phys. Rev. Lett. 96 023201
[7] Li Y Q, Ma J, Wu J Z, Zhang Y C, Zhao Y T, Wang L R, Xiao L T and Jia S T 2012 Chin. Phys. B 21 043404
[8] Zhang Y C, Wu J Z, Li Y Q, Ma J, Wang L R, Zhao Y T, Xiao L T and Jia S T 2011 Chin. Phys. B 20 123701
[9] Ulmanis J, Deiglmayr J, Repp M, Wester R and Weidemüller M 2012 Chem. Rev. 112 4890
[10] McKenzie C, Denschlag J H, Haffner H, Browaeys A, Araujo E E, Fatemi F K, Jones K M, Simsarian J E, Choa D, Simonib A, Tiesinga E, Julienne P S, Helmerson K, Lett P D, Rolston S L and Phillips W D 2002 Phys. Rev. Lett. 88 120403
[11] Schloder U, Silber C, Deuschle T and Zimmermann C 2002 Phys. Rev. A 66 061403
[12] Prodan I D, Pichler M, Junker M, Hulet R G and Bohn J L 2003 Phys. Rev. Lett. 91 080402
[13] Kraft S D, Mudrich M, Staudt M U, Lange J, Dulieu O, Wester R and Weidemuller M 2005 Phys. Rev. A 71 013417
[14] Mickelson P G 2006 "Saturation Effects in Photoassociation Spectroscopy of 86Sr[D]", Rice University 2006
[15] Hansen D and Hemmerich A 2006 Phys. Rev. Lett. 96 073003
[16] Wang L R, Ma J, Ji W B, Wang G P, Xiao L T and Jia S T 2007 Laser Phys. 17 1171
[17] Ma J, Wang L R, Ji W B, Xiao L T and Jia S T 2007 Chin. Phys. Lett. 24 1904
[18] Bohn J L and Julienne P S 1999 Phys. Rev. A 60 414
[19] Napolitano R, Weiner J, Williams C J and Julienne P S 1994 Phys. Rev. Lett. 73 1352
[20] Ma J, Wang L R, Zhao Y T, Xiao L T and Jia S T 2009 J. Mol. Spectros. 255 106
[21] Pichler M, Chen H M and William C S 2004 J. Chem. Phys. 121 1796
[22] Bohn J L and Julienne P S 1996 Phys. Rev. A 54 4637
[23] Simoni A, Julienne P S, Tiesinga E and Williams C J 2002 Phys. Rev. A 66 063406
[24] Wu J Z, Ma J, Ji Z H, Zhang Y C, Li Y Q, Wang L R, Zhao Y T, Xiao L T and Jia S T 2012 Chin. Phys. B 21 093701
[25] Gomez E, Black A T, Turner L D, Tiesinga E and Lett P D 2007 Phys. Rev. A 75 013420
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